MOSFET N-CHANNEL 950 V 1.1 7.2 A TO-220
Products specifications
Qg - Gate Charge | 34 nC |
Rds On - Drain-Source Resistance | 1.35 Ohms |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Tradename | SuperMESH |
Packaging | Tube |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 950 V |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 30 V |
Pd - Power Dissipation | 35 W |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 7.2 A |