MOSFET 910 mOhms typ. 6 A MDmesh K5 Power
Products specifications
Rds On - Drain-Source Resistance | 910 mOhms |
Tradename | MDmesh |
Technology | Si |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 11 nC |
Id - Continuous Drain Current | 6 A |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 900 V |
Vgs - Gate-Source Voltage | 30 V |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Pd - Power Dissipation | 25 W |