STF6N65M2

R 1.00

MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220FP package

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MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220FP package

Products specifications

Tradename	MDmesh
Packaging	Tube
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	1.35 Ohms
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Mounting Style	Through Hole
Qg - Gate Charge	9.8 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	20 W
Id - Continuous Drain Current	4 A
Vds - Drain-Source Breakdown Voltage	650 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Technology	Si

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Products specifications

Tradename	MDmesh
Packaging	Tube
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	1.35 Ohms
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Mounting Style	Through Hole
Qg - Gate Charge	9.8 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	20 W
Id - Continuous Drain Current	4 A
Vds - Drain-Source Breakdown Voltage	650 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Technology	Si