MOSFET N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
Lead Time: 84 Days
Products specifications
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 30 V |
Vds - Drain-Source Breakdown Voltage | 650 V |
Pd - Power Dissipation | 30 W |
Number of Channels | 1 Channel |
Qg - Gate Charge | 35 nC |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Technology | Si |
Configuration | Single |
Rds On - Drain-Source Resistance | 1.3 Ohms |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Tradename | SuperMESH |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 5.4 A |