MOSFET N-Ch, 620V-1.1ohms 5.5A
Products specifications
Channel Mode | Enhancement |
Tradename | SuperMESH |
Id - Continuous Drain Current | 5.5 A |
Vds - Drain-Source Breakdown Voltage | 620 V |
Vgs - Gate-Source Voltage | 30 V |
Rds On - Drain-Source Resistance | 1.28 Ohms |
Mounting Style | Through Hole |
Packaging | Tube |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 3.75 V |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 90 W |
Configuration | Single |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 34 nC |