MOSFET N-Ch 950V 3 Ohm 4A Zener SuperMESH3
Products specifications
Configuration | Single |
Id - Continuous Drain Current | 4 A |
Vgs - Gate-Source Voltage | 30 V |
Technology | Si |
Mounting Style | Through Hole |
Vds - Drain-Source Breakdown Voltage | 950 V |
Qg - Gate Charge | 19 nC |
Packaging | Tube |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Tradename | SuperMESH |
Rds On - Drain-Source Resistance | 3 Ohms |
Pd - Power Dissipation | 25 W |