MOSFET N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package
Products specifications
Id - Continuous Drain Current | 4 A |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |
Channel Mode | Enhancement |
Pd - Power Dissipation | 20 W |
Vds - Drain-Source Breakdown Voltage | 800 V |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Packaging | Tube |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 1.5 Ohms |
Qg - Gate Charge | 5 nC |
Tradename | MDmesh |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 3 V |