MOSFET N-Ch 620V 1.28V Ohm 4.2A SuperMESH 3
Products specifications
Rds On - Drain-Source Resistance | 1.6 Ohms |
Qg - Gate Charge | 26 nC |
Configuration | Single |
Tradename | MDmesh |
Mounting Style | Through Hole |
Vds - Drain-Source Breakdown Voltage | 620 V |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 25 W |
Number of Channels | 1 Channel |
Packaging | Tube |
Id - Continuous Drain Current | 4.2 A |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |