STF5N105K5

R 1.00

MOSFET N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power MOSFET in TO-220FP package

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MOSFET N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power MOSFET in TO-220FP package

Products specifications

Pd - Power Dissipation	25 W
Vds - Drain-Source Breakdown Voltage	1.05 kV
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Packaging	Tube
Configuration	Single
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Id - Continuous Drain Current	3 A
Tradename	MDmesh
Technology	Si
Qg - Gate Charge	12.5 nC
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	2.9 Ohms

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Products specifications

Pd - Power Dissipation	25 W
Vds - Drain-Source Breakdown Voltage	1.05 kV
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Packaging	Tube
Configuration	Single
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Id - Continuous Drain Current	3 A
Tradename	MDmesh
Technology	Si
Qg - Gate Charge	12.5 nC
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	2.9 Ohms