MOSFET N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220FP package
Products specifications
Tradename | MDmesh |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Configuration | Single |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 2.1 Ohms |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 30 V |
Vds - Drain-Source Breakdown Voltage | 800 V |
Channel Mode | Enhancement |
Pd - Power Dissipation | 20 W |
Qg - Gate Charge | 3.7 nC |
Packaging | Tube |
Id - Continuous Drain Current | 3 A |
Technology | Si |