STF42N60M2-EP

R 1.00

MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-220FP package

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MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-220FP package

Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	25 V
Number of Channels	1 Channel
Pd - Power Dissipation	40 W
Channel Mode	Enhancement
Qg - Gate Charge	55 nC
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	87 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Technology	Si
Id - Continuous Drain Current	34 A
Tradename	MDmesh

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Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	25 V
Number of Channels	1 Channel
Pd - Power Dissipation	40 W
Channel Mode	Enhancement
Qg - Gate Charge	55 nC
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	87 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Technology	Si
Id - Continuous Drain Current	34 A
Tradename	MDmesh