STF40N65M2

R 1.00

MOSFET N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220FP package

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MOSFET N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220FP package

Products specifications

Vds - Drain-Source Breakdown Voltage	650 V
Rds On - Drain-Source Resistance	87 mOhms
Configuration	Single
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	25 W
Id - Continuous Drain Current	32 A
Technology	Si
Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Channel Mode	Enhancement
Qg - Gate Charge	56.5 nC
Mounting Style	Through Hole
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Tradename	MDmesh

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Products specifications

Vds - Drain-Source Breakdown Voltage	650 V
Rds On - Drain-Source Resistance	87 mOhms
Configuration	Single
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	25 W
Id - Continuous Drain Current	32 A
Technology	Si
Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Channel Mode	Enhancement
Qg - Gate Charge	56.5 nC
Mounting Style	Through Hole
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Tradename	MDmesh