STF3N62K3

MOSFET N-Ch, 620V-2.2ohms 2.7A

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MOSFETs N-Ch, 620V-2.2ohms 2.7A
Lead Time: 98 Days

Products specifications

Configuration	Single
Qg - Gate Charge	13 nC
Channel Mode	Enhancement
Id - Continuous Drain Current	2.7 A
Pd - Power Dissipation	45 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Technology	Si
Packaging	Tube
Rds On - Drain-Source Resistance	2.5 Ohms
Mounting Style	Through Hole
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	620 V
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	30 V

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Products specifications

Configuration	Single
Qg - Gate Charge	13 nC
Channel Mode	Enhancement
Id - Continuous Drain Current	2.7 A
Pd - Power Dissipation	45 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Technology	Si
Packaging	Tube
Rds On - Drain-Source Resistance	2.5 Ohms
Mounting Style	Through Hole
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	620 V
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	30 V