STF36N60M6

MOSFET

Availability: 925 in stock

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R 123.60

R 101.52

R 92.09

R 87.52

R 85.90

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MOSFETs N-channel 600 V, 85 mOhm typ 30 A MDmesh M6 Power MOSFET
Lead Time: 98 Days

Products specifications

Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	3.25 V
Rds On - Drain-Source Resistance	99 mOhms
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	30 A
Transistor Polarity	N-Channel
Technology	Si
Pd - Power Dissipation	40 W
Number of Channels	1 Channel
Qg - Gate Charge	44.3 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Channel Mode	Enhancement

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Products specifications

Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	3.25 V
Rds On - Drain-Source Resistance	99 mOhms
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	30 A
Transistor Polarity	N-Channel
Technology	Si
Pd - Power Dissipation	40 W
Number of Channels	1 Channel
Qg - Gate Charge	44.3 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Channel Mode	Enhancement