STF34NM60ND

MOSFET N-Ch 600V 0.097 Ohm 29A FDmesh II

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R 144.06

R 143.53

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MOSFETs N-Ch 600V 0.097 Ohm 29A FDmesh II

Products specifications

Transistor Polarity	N-Channel
Mounting Style	Through Hole
Pd - Power Dissipation	190 W
Id - Continuous Drain Current	29 A
Technology	Si
Number of Channels	1 Channel
Configuration	Single
Packaging	Tube
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	650 V
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	110 mOhms

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Products specifications

Transistor Polarity	N-Channel
Mounting Style	Through Hole
Pd - Power Dissipation	190 W
Id - Continuous Drain Current	29 A
Technology	Si
Number of Channels	1 Channel
Configuration	Single
Packaging	Tube
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	650 V
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	110 mOhms