STF33N65M2

MOSFET N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in TO-220FP package

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R 67.86

R 54.39

R 51.70

R 50.62

R 47.12

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MOSFETs N-channel 650 V, 0.117 Ohm typ 24 A MDmesh M2 Power MOSFET

Products specifications

Vgs th - Gate-Source Threshold Voltage	2 V
Transistor Polarity	N-Channel
Technology	Si
Vgs - Gate-Source Voltage	25 V
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	117 mOhms
Tradename	MDmesh
Pd - Power Dissipation	34 W
Number of Channels	1 Channel
Id - Continuous Drain Current	24 A
Packaging	Tube
Qg - Gate Charge	41.5 nC
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V

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Products specifications

Vgs th - Gate-Source Threshold Voltage	2 V
Transistor Polarity	N-Channel
Technology	Si
Vgs - Gate-Source Voltage	25 V
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	117 mOhms
Tradename	MDmesh
Pd - Power Dissipation	34 W
Number of Channels	1 Channel
Id - Continuous Drain Current	24 A
Packaging	Tube
Qg - Gate Charge	41.5 nC
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V