STF33N60DM2

MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in a TO-220FP package

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R 60.86

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MOSFETs N-channel 600 V, 0.110 Ohm typ 24 A MDmesh DM2 Power MOSFET
Lead Time: 112 Days

Products specifications

Mounting Style	Through Hole
Transistor Polarity	N-Channel
Qg - Gate Charge	43 nC
Vgs - Gate-Source Voltage	25 V
Technology	Si
Rds On - Drain-Source Resistance	110 mOhms
Channel Mode	Enhancement
Pd - Power Dissipation	35 W
Configuration	Single
Id - Continuous Drain Current	24 A
Vds - Drain-Source Breakdown Voltage	600 V
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	MDmesh
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C

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Products specifications

Mounting Style	Through Hole
Transistor Polarity	N-Channel
Qg - Gate Charge	43 nC
Vgs - Gate-Source Voltage	25 V
Technology	Si
Rds On - Drain-Source Resistance	110 mOhms
Channel Mode	Enhancement
Pd - Power Dissipation	35 W
Configuration	Single
Id - Continuous Drain Current	24 A
Vds - Drain-Source Breakdown Voltage	600 V
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	MDmesh
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C