STF32NM50N

MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II MOS

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MOSFETs N-Ch 500V 0.1 Ohm 22A MDmesh II MOS
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Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Configuration	Single
Technology	Si
Id - Continuous Drain Current	22 A
Mounting Style	Through Hole
Qg - Gate Charge	62.5 nC
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	500 V
Pd - Power Dissipation	35 W
Rds On - Drain-Source Resistance	130 mOhms

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Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Configuration	Single
Technology	Si
Id - Continuous Drain Current	22 A
Mounting Style	Through Hole
Qg - Gate Charge	62.5 nC
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	500 V
Pd - Power Dissipation	35 W
Rds On - Drain-Source Resistance	130 mOhms