STF2N95K5

MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected

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MOSFETs N-CH 950V 4.2Ohm typ 2A Zener-protected
Lead Time: 98 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	950 V
Qg - Gate Charge	10 nC
Packaging	Tube
Vgs - Gate-Source Voltage	30 V
Configuration	Single
Pd - Power Dissipation	20 W
Transistor Polarity	N-Channel
Id - Continuous Drain Current	2 A
Tradename	SuperMESH
Number of Channels	1 Channel
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	4.2 Ohms
Technology	Si

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Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	950 V
Qg - Gate Charge	10 nC
Packaging	Tube
Vgs - Gate-Source Voltage	30 V
Configuration	Single
Pd - Power Dissipation	20 W
Transistor Polarity	N-Channel
Id - Continuous Drain Current	2 A
Tradename	SuperMESH
Number of Channels	1 Channel
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	4.2 Ohms
Technology	Si