STF2N62K3

MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH3

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MOSFETs N-Ch 620V 3 Ohm 2.2A SuperMESH3
Lead Time: 98 Days

Products specifications

Qg - Gate Charge	15 nC
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Technology	Si
Rds On - Drain-Source Resistance	3.6 Ohms
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	620 V
Configuration	Single
Number of Channels	1 Channel
Packaging	Tube
Vgs - Gate-Source Voltage	30 V
Pd - Power Dissipation	20 W
Id - Continuous Drain Current	2.2 A
Tradename	MDmesh

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Products specifications

Qg - Gate Charge	15 nC
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Technology	Si
Rds On - Drain-Source Resistance	3.6 Ohms
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	620 V
Configuration	Single
Number of Channels	1 Channel
Packaging	Tube
Vgs - Gate-Source Voltage	30 V
Pd - Power Dissipation	20 W
Id - Continuous Drain Current	2.2 A
Tradename	MDmesh