STF2LN60K3

MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET

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MOSFETs N-Ch 600V 4ohm 2A SuperMESH3 FET
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Products specifications

Mounting Style	Through Hole
Rds On - Drain-Source Resistance	4.5 Ohms
Packaging	Tube
Vgs th - Gate-Source Threshold Voltage	4.5 V
Transistor Polarity	N-Channel
Tradename	SuperMESH
Vgs - Gate-Source Voltage	30 V
Vds - Drain-Source Breakdown Voltage	600 V
Number of Channels	1 Channel
Id - Continuous Drain Current	2 A
Technology	Si
Qg - Gate Charge	12 nC
Channel Mode	Enhancement
Pd - Power Dissipation	45 W
Configuration	Single

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Products specifications

Mounting Style	Through Hole
Rds On - Drain-Source Resistance	4.5 Ohms
Packaging	Tube
Vgs th - Gate-Source Threshold Voltage	4.5 V
Transistor Polarity	N-Channel
Tradename	SuperMESH
Vgs - Gate-Source Voltage	30 V
Vds - Drain-Source Breakdown Voltage	600 V
Number of Channels	1 Channel
Id - Continuous Drain Current	2 A
Technology	Si
Qg - Gate Charge	12 nC
Channel Mode	Enhancement
Pd - Power Dissipation	45 W
Configuration	Single