MOSFETs Nchanl 600V 0120 Ohm typ 24 A Pwr MOSFET
Lead Time: 0 Days
Products specifications
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Packaging | Tube |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Qg - Gate Charge | 62.5 nC |
Pd - Power Dissipation | 35 W |
Configuration | Single |
Technology | Si |
Id - Continuous Drain Current | 23 A |
Vgs - Gate-Source Voltage | 25 V |
Rds On - Drain-Source Resistance | 150 mOhms |