STF28N60DM2

MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP package

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R 39.85

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MOSFETs N-channel 600 V, 0.13 Ohm typ 21 A MDmesh DM2 Power MOSFET
Lead Time: 112 Days

Products specifications

Qg - Gate Charge	34 nC
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	130 mOhms
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Technology	Si
Vgs - Gate-Source Voltage	25 V
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	MDmesh
Pd - Power Dissipation	30 W
Id - Continuous Drain Current	21 A
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C

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Products specifications

Qg - Gate Charge	34 nC
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	130 mOhms
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Technology	Si
Vgs - Gate-Source Voltage	25 V
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	MDmesh
Pd - Power Dissipation	30 W
Id - Continuous Drain Current	21 A
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C