MOSFETs N-channel 600 V, 0.150 Ohm typ 20 A MDmesh M2 EP Power MOSFET
Lead Time: 112 Days
Products specifications
Technology | Si |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 33 nC |
Mounting Style | Through Hole |
Tradename | MDmesh |
Vds - Drain-Source Breakdown Voltage | 600 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Pd - Power Dissipation | 30 W |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 163 mOhms |
Id - Continuous Drain Current | 20 A |
Vgs - Gate-Source Voltage | 25 V |