STF26NM60N

MOSFET N-channel 600 V 20 A Mdmesh

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MOSFETs N-channel 600 V 20 A Mdmesh
Lead Time: 98 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	30 V
Minimum Operating Temperature	- 55 C
Packaging	Tube
Pd - Power Dissipation	35 W
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	60 nC
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	20 A
Number of Channels	1 Channel
Technology	Si
Rds On - Drain-Source Resistance	165 mOhms
Tradename	MDmesh

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Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	30 V
Minimum Operating Temperature	- 55 C
Packaging	Tube
Pd - Power Dissipation	35 W
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	60 nC
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	20 A
Number of Channels	1 Channel
Technology	Si
Rds On - Drain-Source Resistance	165 mOhms
Tradename	MDmesh