STF26N60DM6

MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM6 Power MOSFET in TO-220FP package

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MOSFETs N-channel 600 V, 165 mOhm typ 18 A MDmesh DM6 Power MOSFET

Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	25 V
Channel Mode	Enhancement
Qg - Gate Charge	24 nC
Number of Channels	1 Channel
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	195 mOhms
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	30 W
Vgs th - Gate-Source Threshold Voltage	3.25 V
Packaging	Tube
Id - Continuous Drain Current	18 A

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Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	25 V
Channel Mode	Enhancement
Qg - Gate Charge	24 nC
Number of Channels	1 Channel
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	195 mOhms
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	30 W
Vgs th - Gate-Source Threshold Voltage	3.25 V
Packaging	Tube
Id - Continuous Drain Current	18 A