STF25N80K5

MOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5

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R 102.60

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R 68.94

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MOSFETs N-Ch 800V 0.19 Ohm 19.5A MDmesh K5
Lead Time: 98 Days

Products specifications

Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	19.5 A
Vds - Drain-Source Breakdown Voltage	800 V
Packaging	Tube
Channel Mode	Enhancement
Technology	Si
Tradename	MDmesh
Configuration	Single
Qg - Gate Charge	40 nC
Rds On - Drain-Source Resistance	260 mOhms
Vgs th - Gate-Source Threshold Voltage	4 V
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Pd - Power Dissipation	40 W

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Products specifications

Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	19.5 A
Vds - Drain-Source Breakdown Voltage	800 V
Packaging	Tube
Channel Mode	Enhancement
Technology	Si
Tradename	MDmesh
Configuration	Single
Qg - Gate Charge	40 nC
Rds On - Drain-Source Resistance	260 mOhms
Vgs th - Gate-Source Threshold Voltage	4 V
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Pd - Power Dissipation	40 W