MOSFETs N-channel 650 V, 0.185 Ohm typ 16 A MDmesh M2 Power MOSFET
Lead Time: 112 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 650 V |
Minimum Operating Temperature | - 55 C |
Packaging | Tube |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Configuration | Single |
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 25 V |
Pd - Power Dissipation | 30 W |
Qg - Gate Charge | 29 nC |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Technology | Si |
Rds On - Drain-Source Resistance | 185 mOhms |
Id - Continuous Drain Current | 16 A |
Number of Channels | 1 Channel |