STF22NM60N

MOSFET N-channel 600 V 0.190 16A MDmesh

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R 110.14

R 95.59

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MOSFETs N-channel 600 V 0.190 16A MDmesh
Lead Time: 98 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	220 mOhms
Mounting Style	Through Hole
Id - Continuous Drain Current	16 A
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Transistor Polarity	N-Channel
Configuration	Single
Pd - Power Dissipation	30 W
Qg - Gate Charge	44 nC
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V
Tradename	MDmesh
Minimum Operating Temperature	- 55 C
Technology	Si

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Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	220 mOhms
Mounting Style	Through Hole
Id - Continuous Drain Current	16 A
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Transistor Polarity	N-Channel
Configuration	Single
Pd - Power Dissipation	30 W
Qg - Gate Charge	44 nC
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V
Tradename	MDmesh
Minimum Operating Temperature	- 55 C
Technology	Si