STF20NF20

MOSFET Low charge STripFET

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MOSFETs Low charge STripFET
Lead Time: 182 Days

Products specifications

Channel Mode	Enhancement
Technology	Si
Rds On - Drain-Source Resistance	125 mOhms
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	28 nC
Maximum Operating Temperature	+ 175 C
Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	200 V
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Tradename	STripFET
Packaging	Tube
Id - Continuous Drain Current	18 A
Pd - Power Dissipation	90 W
Configuration	Single
Number of Channels	1 Channel

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Products specifications

Channel Mode	Enhancement
Technology	Si
Rds On - Drain-Source Resistance	125 mOhms
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	28 nC
Maximum Operating Temperature	+ 175 C
Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	200 V
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Tradename	STripFET
Packaging	Tube
Id - Continuous Drain Current	18 A
Pd - Power Dissipation	90 W
Configuration	Single
Number of Channels	1 Channel