MOSFETs N-channel 900 V, 0.21 Ohm typ 20 A MDmesh K5 Power MOSFET
Lead Time: 98 Days
Products specifications
Number of Channels | 1 Channel |
Tradename | MDmesh |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |
Channel Mode | Enhancement |
Pd - Power Dissipation | 40 W |
Rds On - Drain-Source Resistance | 210 mOhms |
Configuration | Single |
Mounting Style | Through Hole |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 900 V |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 40 nC |
Id - Continuous Drain Current | 20 A |