STF20N65M5

MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh M5

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R 34.20

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MOSFETs N-ch 650 V 0.168 Ohm 18 A MDmesh M5
Lead Time: 98 Days

Products specifications

Technology	Si
Vgs th - Gate-Source Threshold Voltage	4 V
Id - Continuous Drain Current	18 A
Packaging	Tube
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	190 mOhms
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Pd - Power Dissipation	130 W
Vds - Drain-Source Breakdown Voltage	650 V
Qg - Gate Charge	36 nC
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Technology	Si
Vgs th - Gate-Source Threshold Voltage	4 V
Id - Continuous Drain Current	18 A
Packaging	Tube
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	190 mOhms
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Pd - Power Dissipation	130 W
Vds - Drain-Source Breakdown Voltage	650 V
Qg - Gate Charge	36 nC
Number of Channels	1 Channel
Transistor Polarity	N-Channel