STF19NF20

MOSFET N Ch 55V 3.2 120A Pwr MOSFET

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MOSFETs N Ch 200V 15A Pwr MOSFET

Products specifications

Pd - Power Dissipation	25 W
Vds - Drain-Source Breakdown Voltage	200 V
Packaging	Tube
Number of Channels	1 Channel
Technology	Si
Rds On - Drain-Source Resistance	160 mOhms
Configuration	Single
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	15 A
Mounting Style	Through Hole
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Tradename	MESH OVERLAY
Transistor Polarity	N-Channel

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Products specifications

Pd - Power Dissipation	25 W
Vds - Drain-Source Breakdown Voltage	200 V
Packaging	Tube
Number of Channels	1 Channel
Technology	Si
Rds On - Drain-Source Resistance	160 mOhms
Configuration	Single
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	15 A
Mounting Style	Through Hole
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Tradename	MESH OVERLAY
Transistor Polarity	N-Channel