STF18NM60ND

MOSFET N-CH 600V 0.25Ohm 13A Fdmesh II

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MOSFETs N-CH 600V 0.25Ohm 13A Fdmesh II

Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Number of Channels	1 Channel
Packaging	Tube
Id - Continuous Drain Current	13 A
Technology	Si
Vgs - Gate-Source Voltage	25 V
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Qg - Gate Charge	34 nC
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	290 mOhms
Pd - Power Dissipation	30 W

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Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Number of Channels	1 Channel
Packaging	Tube
Id - Continuous Drain Current	13 A
Technology	Si
Vgs - Gate-Source Voltage	25 V
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Qg - Gate Charge	34 nC
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	290 mOhms
Pd - Power Dissipation	30 W