STF18NM60N

MOSFET N-channel 600 V 0.27ohm 13A MDmesh

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MOSFETs N-channel 600 V 0.27ohm 13A MDmesh
Lead Time: 98 Days

Products specifications

Packaging	Tube
Id - Continuous Drain Current	13 A
Qg - Gate Charge	35 nC
Technology	Si
Pd - Power Dissipation	30 W
Number of Channels	1 Channel
Mounting Style	Through Hole
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	650 V
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Rds On - Drain-Source Resistance	260 mOhms

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Products specifications

Packaging	Tube
Id - Continuous Drain Current	13 A
Qg - Gate Charge	35 nC
Technology	Si
Pd - Power Dissipation	30 W
Number of Channels	1 Channel
Mounting Style	Through Hole
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	650 V
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Rds On - Drain-Source Resistance	260 mOhms