STF18N60DM2

MOSFET N-channel 600 V, 0.260 Ohm typ., 13 A MDmesh DM2 Power MOSFET in a TO-220FP package

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R 58.43

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MOSFETs N-channel 600 V, 0.260 Ohm typ 12 A MDmesh DM2 Power MOSFET

Products specifications

Configuration	Single
Rds On - Drain-Source Resistance	260 mOhms
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	3 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Transistor Polarity	N-Channel
Id - Continuous Drain Current	13 A
Vgs - Gate-Source Voltage	25 V
Mounting Style	Through Hole
Number of Channels	1 Channel
Channel Mode	Enhancement
Pd - Power Dissipation	25 W
Qg - Gate Charge	20 nC

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Products specifications

Configuration	Single
Rds On - Drain-Source Resistance	260 mOhms
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	3 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Transistor Polarity	N-Channel
Id - Continuous Drain Current	13 A
Vgs - Gate-Source Voltage	25 V
Mounting Style	Through Hole
Number of Channels	1 Channel
Channel Mode	Enhancement
Pd - Power Dissipation	25 W
Qg - Gate Charge	20 nC