STF17N62K3

MOSFET N-Ch 620V 0.34 Ohm 15A SuperMESH 3 2

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MOSFETs N-Ch 620V 0.34 Ohm 15A SuperMESH 3 2
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Products specifications

Id - Continuous Drain Current	15.5 A
Rds On - Drain-Source Resistance	280 mOhms
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	620 V
Vgs - Gate-Source Voltage	30 V
Number of Channels	1 Channel
Technology	Si
Pd - Power Dissipation	40 W
Qg - Gate Charge	105 nC
Mounting Style	Through Hole
Packaging	Tube
Tradename	SuperMESH
Configuration	Single
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C

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Products specifications

Id - Continuous Drain Current	15.5 A
Rds On - Drain-Source Resistance	280 mOhms
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	620 V
Vgs - Gate-Source Voltage	30 V
Number of Channels	1 Channel
Technology	Si
Pd - Power Dissipation	40 W
Qg - Gate Charge	105 nC
Mounting Style	Through Hole
Packaging	Tube
Tradename	SuperMESH
Configuration	Single
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C