STF15N60M2-EP

MOSFET N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220FP package

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MOSFETs PTD HIGH VOLTAGE
Lead Time: 112 Days

Products specifications

Pd - Power Dissipation	25 W
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	17 nC
Configuration	Single
Rds On - Drain-Source Resistance	378 mOhms
Id - Continuous Drain Current	11 A
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Tradename	MDmesh
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si

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Products specifications

Pd - Power Dissipation	25 W
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	17 nC
Configuration	Single
Rds On - Drain-Source Resistance	378 mOhms
Id - Continuous Drain Current	11 A
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Tradename	MDmesh
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si