MOSFETs N-Ch 950V 0.68 Ohm 10A SuperMESH3
Lead Time: 98 Days
Products specifications
Configuration | Single |
Qg - Gate Charge | 51 nC |
Rds On - Drain-Source Resistance | 850 mOhms |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 40 W |
Maximum Operating Temperature | + 150 C |
Packaging | Tube |
Vds - Drain-Source Breakdown Voltage | 950 V |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Id - Continuous Drain Current | 10 A |
Technology | Si |
Tradename | SuperMESH |
Vgs - Gate-Source Voltage | 30 V |