MOSFETs N-channel 650 V, 0.37 Ohm typ 10 A MDmesh M2 Power MOSFET
Lead Time: 112 Days
Products specifications
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 25 V |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 370 mOhms |
Technology | Si |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 10 A |
Vds - Drain-Source Breakdown Voltage | 650 V |
Number of Channels | 1 Channel |
Qg - Gate Charge | 17 nC |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Configuration | Single |
Tradename | MDmesh |
Pd - Power Dissipation | 25 W |