STF13N60M2

MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2

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MOSFETs N-CH 600V 0.35Ohm 11A Mdmesh M2
Lead Time: 112 Days

Products specifications

Vgs - Gate-Source Voltage	25 V
Tradename	MDmesh
Mounting Style	Through Hole
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	380 mOhms
Configuration	Single
Qg - Gate Charge	17 nC
Packaging	Tube
Transistor Polarity	N-Channel
Technology	Si
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	650 V
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	25 W
Vgs th - Gate-Source Threshold Voltage	3 V
Id - Continuous Drain Current	11 A

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Products specifications

Vgs - Gate-Source Voltage	25 V
Tradename	MDmesh
Mounting Style	Through Hole
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	380 mOhms
Configuration	Single
Qg - Gate Charge	17 nC
Packaging	Tube
Transistor Polarity	N-Channel
Technology	Si
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	650 V
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	25 W
Vgs th - Gate-Source Threshold Voltage	3 V
Id - Continuous Drain Current	11 A