MOSFETs N-channel 600 V, 0.310 Ohm typ 11 A MDmesh DM2 Power MOSFET
Lead Time: 112 Days
Products specifications
Tradename | MDmesh |
Pd - Power Dissipation | 25 W |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Vgs - Gate-Source Voltage | 25 V |
Technology | Si |
Configuration | Single |
Id - Continuous Drain Current | 11 A |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 19 nC |
Vds - Drain-Source Breakdown Voltage | 600 V |
Rds On - Drain-Source Resistance | 310 mOhms |