STF12N65M5

MOSFET POWER MOSFET N-CH 650V

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R 28.81

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MOSFETs POWER MOSFET N-CH 650V
Lead Time: 98 Days

Products specifications

Pd - Power Dissipation	25 W
Packaging	Tube
Mounting Style	Through Hole
Technology	Si
Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	650 V
Number of Channels	1 Channel
Configuration	Single
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	430 mOhms
Tradename	MDmesh
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	8.5 A
Qg - Gate Charge	22 nC

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Products specifications

Pd - Power Dissipation	25 W
Packaging	Tube
Mounting Style	Through Hole
Technology	Si
Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	650 V
Number of Channels	1 Channel
Configuration	Single
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	430 mOhms
Tradename	MDmesh
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	8.5 A
Qg - Gate Charge	22 nC