STF11NM65N

MOSFET N-Channel 650V Pwr Mosfet

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MOSFETs N-Channel 650V Pwr Mosfet
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Products specifications

Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	12 A
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Technology	Si
Configuration	Single
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	30 W
Minimum Operating Temperature	- 55 C
Tradename	MDmesh
Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	380 mOhms

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Products specifications

Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	12 A
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Technology	Si
Configuration	Single
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	30 W
Minimum Operating Temperature	- 55 C
Tradename	MDmesh
Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	380 mOhms