STF11NM60ND

MOSFET N-Ch, 600V-0.37ohms FDMesh 10A

Availability: 143 in stock

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R 79.98

R 57.63

R 56.82

R 55.20

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MOSFETs N-Ch, 600V-0.37ohms FDMesh 10A
Lead Time: 98 Days

Products specifications

Packaging	Tube
Vgs - Gate-Source Voltage	25 V
Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Id - Continuous Drain Current	10 A
Channel Mode	Enhancement
Tradename	FDmesh
Pd - Power Dissipation	90 W
Technology	Si
Rds On - Drain-Source Resistance	450 mOhms
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Mounting Style	Through Hole
Qg - Gate Charge	30 nC
Transistor Polarity	N-Channel

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Products specifications

Packaging	Tube
Vgs - Gate-Source Voltage	25 V
Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Id - Continuous Drain Current	10 A
Channel Mode	Enhancement
Tradename	FDmesh
Pd - Power Dissipation	90 W
Technology	Si
Rds On - Drain-Source Resistance	450 mOhms
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Mounting Style	Through Hole
Qg - Gate Charge	30 nC
Transistor Polarity	N-Channel