STF11N60M2-EP

MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP package

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MOSFETs N-channel 600 V, 0.550 Ohm typ 7.5 A MDmesh M2 EP Power MOSFET
Lead Time: 112 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	25 V
Channel Mode	Enhancement
Pd - Power Dissipation	25 W
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Qg - Gate Charge	12.4 nC
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	550 mOhms
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh
Configuration	Single
Mounting Style	Through Hole
Id - Continuous Drain Current	7.5 A

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Products specifications

Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	25 V
Channel Mode	Enhancement
Pd - Power Dissipation	25 W
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Qg - Gate Charge	12.4 nC
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	550 mOhms
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh
Configuration	Single
Mounting Style	Through Hole
Id - Continuous Drain Current	7.5 A