STF11N60DM2

MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package

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MOSFETs N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET

Products specifications

Id - Continuous Drain Current	10 A
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	370 mOhms
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Technology	Si
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Qg - Gate Charge	16.5 nC
Tradename	MDmesh
Transistor Polarity	N-Channel
Pd - Power Dissipation	25 W

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Products specifications

Id - Continuous Drain Current	10 A
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	370 mOhms
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Technology	Si
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Qg - Gate Charge	16.5 nC
Tradename	MDmesh
Transistor Polarity	N-Channel
Pd - Power Dissipation	25 W