MOSFET P-CH 60V 0.13Ohm 10A STripFET VI
Products specifications
Tradename | STripFET |
Vds - Drain-Source Breakdown Voltage | 60 V |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Mounting Style | Through Hole |
Qg - Gate Charge | 6.4 nC |
Vgs - Gate-Source Voltage | 10 V |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Packaging | Tube |
Configuration | Single |
Id - Continuous Drain Current | 10 A |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 20 W |
Rds On - Drain-Source Resistance | 160 mOhms |
Transistor Polarity | P-Channel |