STF10NM60ND

MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR

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R 31.24

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R 27.20

R 26.63

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MOSFETs N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
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Products specifications

Technology	Si
Number of Channels	1 Channel
Id - Continuous Drain Current	8 A
Pd - Power Dissipation	25 W
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	650 V
Rds On - Drain-Source Resistance	600 mOhms
Packaging	Tube
Mounting Style	Through Hole
Configuration	Single
Vgs - Gate-Source Voltage	25 V

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Products specifications

Technology	Si
Number of Channels	1 Channel
Id - Continuous Drain Current	8 A
Pd - Power Dissipation	25 W
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	650 V
Rds On - Drain-Source Resistance	600 mOhms
Packaging	Tube
Mounting Style	Through Hole
Configuration	Single
Vgs - Gate-Source Voltage	25 V