MOSFETs N-channel 800 V, 0.470 Ohm typ 9 A MDmesh K5 Power MOSFET
Lead Time: 98 Days
Products specifications
Mounting Style | Through Hole |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |
Packaging | Tube |
Vds - Drain-Source Breakdown Voltage | 800 V |
Qg - Gate Charge | 22 nC |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Tradename | MDmesh |
Id - Continuous Drain Current | 9 A |
Channel Mode | Enhancement |
Pd - Power Dissipation | 30 W |
Rds On - Drain-Source Resistance | 470 mOhms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |